View APTC60AM35SCTG_1212037.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTC60AM35SCTG
Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
NT C2 VBUS Q1
VDSS = 600V RDSon = 35m max @ Tj = 25C ID = 72A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features *
G1 O UT S1 Q2
*
Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated
G2
0/VBUS S2 NT C1
Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
* * * *
OUT VBUS
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
1-8
APTC60AM35SCTG - Rev 3
Benefits * Outstanding performance at high frequency operation 0/VBUS * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance S2 S1 NTC2 * Solderable terminals both for power and signal for G1 G2 NTC1 easy PCB mounting * Low profile * RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25C 72 ID Continuous Drain Current A Tc = 80C 54 IDM Pulsed Drain current 288 VGS Gate - Source Voltage 30 V RDSon Drain - Source ON Resistance 35 m PD Maximum Power Dissipation Tc = 25C 416 W IAR Avalanche current (repetitive and non repetitive) 20 A EAR Repetitive Avalanche Energy 1 mJ EAS Single Pulse Avalanche Energy 1800
OUT
July, 2006
APTC60AM35SCTG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V
Min Tj = 25C Tj = 125C 2.1
Typ
VGS = 10V, ID = 36A VGS = VDS, ID = 2mA VGS = 20 V, VDS = 0V
3
Max 50 500 35 3.9 150
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 72A Inductive switching @ 125C VGS = 15V VBus = 400V ID = 72A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 400V ID = 72A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 400V ID = 72A, R G = 2.5
Min
Typ 14 5.13 0.42 518 58 222 21 30 283 84 804 1960 1315 2412
Max
Unit nF
nC
ns
J
J
Series diode ratings and characteristics
Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 60A IF = 120A IF = 60A IF = 60A VR = 133V di/dt = 400A/s VR=200V Tj = 25C Tj = 125C Tc = 85C
Min 200
Typ
Max 350 600
Unit V A A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
24 48 66 300
ns nC
www.microsemi.com
2-8
APTC60AM35SCTG - Rev 3
July, 2006
60 1.1 1.4 0.9
1.15 V
APTC60AM35SCTG
Parallel SiC diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 40A Test Conditions VR=600V Tj = 25C Tj = 175C Tc = 125C Tj = 25C Tj = 175C Min 600 Typ 200 400 40 1.6 2.0 56 260 200 Max 800 4000 1.8 2.4 Unit V A A V nC pF
IF = 40A, VR = 300V di/dt =1200A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Transistor Series diode
Min
Typ
Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Max 0.3 0.65 0.8 150 125 100 4.7 160
Unit
C/W
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To Heatsink
M5
2500 -40 -40 -40 2.5
V C N.m g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
Typ 50 3952
Max
Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
www.microsemi.com
3-8
APTC60AM35SCTG - Rev 3
July, 2006
APTC60AM35SCTG
SP4 Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
www.microsemi.com
4-8
APTC60AM35SCTG - Rev 3
July, 2006
APTC60AM35SCTG
Typical CoolMOS Performance Curve
0.35 Thermal Impedance (C/W) 0.3 0.25 0.2
0.5
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9 0.7
0.15 0.1 0.05
0.3 0.1 0.05 Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 400 360 320 280 240 200 160 120 80 40 0 0 280
6.5V 6V 5.5V 5V 4.5V 4V
Transfert Characteristics 240 200 160 120 80 40 0 0
T J=125C TJ=25C VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle
ID, Drain Current (A)
ID, Drain Current (A)
VGS=15&10V
T J=-55C
5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current
25
1 2 3 4 5 6 VGS, Gate to Source Voltage (V)
7
RDS(on) Drain to Source ON Resistance
1.1 1.05 1 0.95 0.9 0 20 40 60 80 100 120 I D, Drain Current (A) ID, DC Drain Current (A)
Normalized to VGS=10V @ 36A VGS=10V
DC Drain Current vs Case Temperature 80 70 60 50 40 30 20 10 0
July, 2006 5-8 APTC60AM35SCTG - Rev 3
VGS =20V
25
50 75 100 125 TC, Case Temperature (C)
150
www.microsemi.com
APTC60AM35SCTG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) ON resistance vs Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
V GS=10V ID= 72A
Threshold Voltage vs Temperature 1.2
VGS(TH), Threshold Voltage (Normalized)
1000
I D, Drain Current (A)
1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C)
100
limited by RDSon
100 s
10
Single pulse TJ=150C TC=25C 1 10 100
1 ms 10 ms
1 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage
VGS , Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage 100000
C, Capacitance (pF)
Ciss
14 12 10 8 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600
July, 2006
10000
Coss
ID=72A TJ=25C
V DS=120V VDS=300V V DS =480V
1000
Crss
100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
www.microsemi.com
6-8
APTC60AM35SCTG - Rev 3
APTC60AM35SCTG
350 300
td(on) and td(off) (ns)
Delay Times vs Current 120
td(off)
Rise and Fall times vs Current
VDS=400V RG=2.5 T J=125C L=100H
100
tr and t f (ns)
250 200 150 100 50 0 0 20 40 60 80 100 120 ID, Drain Current (A) Switching Energy vs Current 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0
Switching Energy (mJ)
VDS=400V RG=2.5 TJ=125C L=100H td(on) VDS=400V RG=2.5 TJ=125C L=100H
tf
80 60 40 20 0 0
tr
20
40
60
80
100
120
ID, Drain Current (A) Switching Energy vs Gate Resistance 10 8 6 4 Eon 2 0
VDS=400V ID=72A T J=125C L=100H
Switching Energy (mJ)
Eoff
Eoff
Eon
20
40 60 80 100 ID, Drain Current (A)
120
0
5
10
15
20
25
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
T J=150C
Operating Frequency vs Drain Current 160 140
Frequency (kHz)
120 100 80 60 40 20 0 15 20 25 30 35 40 45 50 55 60 65 ID, Drain Current (A)
Hard Switching ZVS ZCS
I DR, Reverse Drain Current (A)
100
TJ=25C
V DS =400V D=50% RG =2.5 T J=125C
10
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V)
www.microsemi.com
7-8
APTC60AM35SCTG - Rev 3
July, 2006
APTC60AM35SCTG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 Thermal Impedance (C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
0.7 0.5 0.3 0.1 0.05 Single Pulse 0.9
0 0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Characteristics
T J=25C
Reverse Characteristics
80
I F Forward Current (A)
800
IR Reverse Current (A)
700 600 500 400 300 200 100 0 200
T J=175C
60 40 20 0 0
T J=75C
T J=175C TJ=125C
TJ=125C T J=75C
T J=25C
0.5
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
300 400 500 600 700 VR Reverse Voltage (V)
800
1600 1400 C, Capacitance (pF) 1200 1000 800 600 400 200 0
July, 2006 8-8 APTC60AM35SCTG - Rev 3
1
10 100 VR Reverse Voltage
1000
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com

▲Up To Search▲

Price & Availability of APTC60AM35SCTG

	To Download APTC60AM35SCTG Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .